Effects of CNT Diameter Variability on a CNFET-Based SRAM
Shahidipour, Hamed, Zhong, Yue, Ahmadi, Arash and Maharatna, Koushik (2010) Effects of CNT Diameter Variability on a CNFET-Based SRAM. At Asia Pacific Conference on Circuits and Systems (APCCAS), Asia, (Submitted).
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Description/Abstract
In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: 2010 |
| Keywords: | CNFET, SRAM, Variability, Carbon Nanotube, Noise Margin |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > Electronic & Software Systems |
| Item ID: | 271604 |
| Date Deposited: | 28 Sep 2010 15:14 |
| Last Modified: | 24 Aug 2012 03:50 |
| Contributors: | Shahidipour, Hamed (Author) Zhong, Yue (Author) Ahmadi, Arash (Author) Maharatna, Koushik (Author) |
| Date: | December 2010 |
| Additional Information: | Event Dates: 2010 |
| Status: | Submitted |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/271604 |
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