Spin transport in Germanium at room temperature


Shen, C., Trypiniotis, T., Lee, K.Y., Holmes, S.N. , Mansell, R., Husain, M., Shah, V., Li, X.V., Kurebayashi, H, Farrer, I, de Groot, C H, Leadley, D R, Bell, G, Parker, E H C, Whall, T, Ritchie, D A and Barnes, C H W (2010) Spin transport in Germanium at room temperature. Applied Physics Letters, 97, (162104), 1-3. (doi:10.1063/1.3505337).

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Description/Abstract

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarised electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We successfully demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature.

Item Type: Article
ISSNs: 0003-6951 (print)
0003-6951 (electronic)
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Item ID: 271616
Date Deposited: 05 Oct 2010 16:04
Last Modified: 26 Apr 2013 05:02
Contributors: Shen, C. (Author)
Trypiniotis, T. (Author)
Lee, K.Y. (Author)
Holmes, S.N. (Author)
Mansell, R. (Author)
Husain, M. (Author)
Shah, V. (Author)
Li, X.V. (Author)
Kurebayashi, H (Author)
Farrer, I (Author)
de Groot, C H (Author)
Leadley, D R (Author)
Bell, G (Author)
Parker, E H C (Author)
Whall, T (Author)
Ritchie, D A (Author)
Barnes, C H W (Author)
Date: October 2010
Status: Published
Publisher: American Institute of Physics
Contact Email Address: chdg@ecs.soton.ac.uk
Further Information:Google Scholar
ISI Citation Count:21
URI: http://eprints.soton.ac.uk/id/eprint/271616

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