Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications


Sun, K., Hakim, M.M.A., Kong, J., de Planque, M.R.R., Morgan, H., Roach, P.L., Davies, D.E., Howarth, P. and Ashburn, P. (2010) Polycrystalline silicon nanowires patterned by top-down lithography for biosensor applications. Micro and Nano Engineering, Genoa, Italy, 19 - 22 Sep 2010.

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Description/Abstract

Recently, Si nanowires are receiving much attention for biosensing because they offer the prospect of real-time, label-free, high sensitivity sensing. The most popular approach to silicon nanowire fabrication uses electron-beam lithography to pattern silicon nanowires on SOI wafers. While this approach has the advantage of CMOS-compatibility, it has the disadvantage of high cost, because both the lithography and the SOI wafers are expensive. Recently, spacer nanowires patterned by a conventional anisotropic dry etch were used to form transistors, which tends to give a triangular shape. In this paper, we demonstrate a low cost, CMOS-compatible fabrication process of polycrystalline silicon nanowires for biosensor applications using a Bosch dry etch process. The nanowires produced in this way have a rectangular profile, which gives good control over the nanowire width and height.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: Event Dates: 19th - 22nd September
Keywords: nanowire, polysilicon, biosensor
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 271774
Date Deposited: 13 Dec 2010 17:01
Last Modified: 02 Mar 2012 12:22
Contributors: Sun, K. (Author)
Hakim, M.M.A. (Author)
Kong, J. (Author)
de Planque, M.R.R. (Author)
Morgan, H. (Author)
Roach, P.L. (Author)
Davies, D.E. (Author)
Howarth, P. (Author)
Ashburn, P. (Author)
Date: 2010
Additional Information: Event Dates: 19th - 22nd September
Status: Unpublished
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/271774

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