High-resistivity Czochralski-silicon using Deep Level Doping Compensation

Abuelgasim, Ahmed, Mallik, Kanad, de Groot, Kees, Ashburn, Peter, Jordan, D.M. and Wilshaw, P.R. (2010) High-resistivity Czochralski-silicon using Deep Level Doping Compensation. ESSDERC 2010, Sevilla, Spain. (In Press)

Record type: Conference or Workshop Item (Poster)

Abstract

We report a combination of experimental, analytical, and numerical results indicating that deep level doping of Czochralski grown Si wafers is capable of providing very high resistivity handle wafers for the silicon-on-insulator configuration. This would be extremely beneficial for high frequency applications.

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Accepted/In Press date: September 2010

Additional Information: Event Dates: September 2010

Venue - Dates: ESSDERC 2010, Sevilla, Spain, 2010-08-31

Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 271786

URI: http://eprints.soton.ac.uk/id/eprint/271786

PURE UUID: 54e079b0-94e6-4d2f-aac4-2c23c17b5b39

ORCID for Kees de Groot:

orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 15 Dec 2010 11:11

Last modified: 11 Dec 2021 03:43

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Contributors

Author: Ahmed Abuelgasim

Author: Kanad Mallik

Author: Kees de Groot

Author: Peter Ashburn

Author: D.M. Jordan

Author: P.R. Wilshaw

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