Magneto-resistance in a lithography defined single constrained domain wall spin valve


Wang, Yudong, Claudio-Gonzalez, D., Fangohr, H. and De Groot, Kees (2010) Magneto-resistance in a lithography defined single constrained domain wall spin valve. Applied Physics Letters, 97, 262501-262503. (doi:10.1063/1.3531666).

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Description/Abstract

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.

Item Type: Article
ISSNs: 0003-6951 (print)
0003-6951 (electronic)
Related URLs:
Subjects: Q Science > QC Physics
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 271789
Date Deposited: 15 Dec 2010 11:26
Last Modified: 14 Mar 2013 13:16
Contributors: Wang, Yudong (Author)
Claudio-Gonzalez, D. (Author)
Fangohr, H. (Author)
De Groot, Kees (Author)
Date: December 2010
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/271789

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