Magneto-resistance in a lithography defined single constrained domain wall spin valve
Wang, Yudong, Claudio-Gonzalez, D., Fangohr, H. and De Groot, Kees (2010) Magneto-resistance in a lithography defined single constrained domain wall spin valve. Applied Physics Letters, 97, 262501-262503. (doi:10.1063/1.3531666).
We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 . This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge.
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||15 Dec 2010 11:26|
|Last Modified:||14 Mar 2013 13:16|
|Contributors:||Wang, Yudong (Author)
Claudio-Gonzalez, D. (Author)
Fangohr, H. (Author)
De Groot, Kees (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)