Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors
Uchino, Takashi, Ayre, G., Smith, D. C., Hutchison, J. L. , de Groot, C. H. and Ashburn, Peter (2010) Growth of Carbon Nanotubes on HfO2 towards Highly Sensitive Nano-Sensors. Jpn. J. Appl. Phys, 49, 04DN11-1-04DN11-4.
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Description/Abstract
Carbon nanotube (CNT) growth on HfO2 is reported for the first time. The process uses a combination of Ge and Fe nanoparticles and achieves an increase in CNT density from 0.15 to 6.2 mm length/mm2 compared with Fe nanoparticles alone. The synthesized CNTs are assessed by the fabrication of back-gate CNT field-effect transistors with Al source/drain contacts for nano-sensor applications. The devices exhibit excellent p-type behavior with an Ion=Ioff ratio of 105 and a steep sub-threshold slope of 130 mV/dec.
| Item Type: | Article |
|---|---|
| Keywords: | Carbon nanotube, field-effect transistor |
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 271796 |
| Date Deposited: | 15 Dec 2010 16:50 |
| Last Modified: | 02 Mar 2012 12:42 |
| Contributors: | Uchino, Takashi (Author) Ayre, G. (Author) Smith, D. C. (Author) Hutchison, J. L. (Author) de Groot, C. H. (Author) Ashburn, Peter (Author) |
| Date: | 1 April 2010 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 0 |
| URI: | http://eprints.soton.ac.uk/id/eprint/271796 |
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