Metal-catalyst-free growth of silica nanowires and carbon nanotubes using Ge nanostructures
Metal-catalyst-free growth of silica nanowires and carbon nanotubes using Ge nanostructures
The use of Ge nanostructures is investigated for the metal-catalyst-free growth of silica nanowires and carbon nanotubes (CNTs). Silica nanowires with diameters of 10-50 nm and lengths of ? 1 ?m were grown from SiGe islands, Ge dots, and Ge nanoparticles. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal that the nanowires grow from oxide nanoparticles on the sample surface. We propose that the growth mechanism is thermal diffusion of oxide through the GeO2 nanostructures. CNTs with diameters 0.6-2.5 nm and lengths of less than a few ?m were similarly grown by chemical vapor deposition from different types of Ge nanostructures. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. HRTEM images reveal that the CNTs also grow from oxide nanoparticles, comprising a mixture of GeO2 and SiO2.
Carbon Nanotube Metal-Catalyst-Free Silica Nanowires Growth Ge Nanostructures
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Hutchison, J. L.
8d586f88-f515-450c-b504-55ea039cae68
Ayre, G.
f0c2f684-1bba-4bf9-8e23-a82e51787ff9
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
2011
Uchino, Takashi
53356d82-f008-4b0e-8c7e-359c0d283b6c
Hutchison, J. L.
8d586f88-f515-450c-b504-55ea039cae68
Ayre, G.
f0c2f684-1bba-4bf9-8e23-a82e51787ff9
Smith, D.C.
d9b2c02d-b7ea-498b-9ea1-208a1681536f
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Ashburn, Peter
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Uchino, Takashi, Hutchison, J. L., Ayre, G., Smith, D.C., de Groot, C.H. and Ashburn, Peter
(2011)
Metal-catalyst-free growth of silica nanowires and carbon nanotubes using Ge nanostructures.
Japanese Journal of Applied Physics, 50 (4).
Abstract
The use of Ge nanostructures is investigated for the metal-catalyst-free growth of silica nanowires and carbon nanotubes (CNTs). Silica nanowires with diameters of 10-50 nm and lengths of ? 1 ?m were grown from SiGe islands, Ge dots, and Ge nanoparticles. High-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) reveal that the nanowires grow from oxide nanoparticles on the sample surface. We propose that the growth mechanism is thermal diffusion of oxide through the GeO2 nanostructures. CNTs with diameters 0.6-2.5 nm and lengths of less than a few ?m were similarly grown by chemical vapor deposition from different types of Ge nanostructures. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. HRTEM images reveal that the CNTs also grow from oxide nanoparticles, comprising a mixture of GeO2 and SiO2.
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uchino04DN02.pdf
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Accepted/In Press date: April 2011
Published date: 2011
Keywords:
Carbon Nanotube Metal-Catalyst-Free Silica Nanowires Growth Ge Nanostructures
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 271798
URI: http://eprints.soton.ac.uk/id/eprint/271798
PURE UUID: db3ec891-e726-4971-b1ab-108cd1559057
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Date deposited: 15 Dec 2010 17:06
Last modified: 15 Mar 2024 03:11
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Author:
Takashi Uchino
Author:
J. L. Hutchison
Author:
G. Ayre
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