Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96


Kukharenka, E, Frety, N, Shepelevich, VG and Tedenac, JC (2002) Electrical and microstructural properties of Bi2-xSbxTe and Bi1-xSbxTe2 thin foils obtained by the ultrarapid quenching process, the 4th International Conference on Material for Microelectronics and Nanoengineering, Finland, ESPOO 2002, pp. 93-96. At the 4th International Conference on Material for Microelectronics and Nanoengineering, , ESPOO , Finland, , 93-96.

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Item Type: Conference or Workshop Item (Speech)
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science
Faculty of Physical and Applied Science > Electronics and Computer Science > EEE
Item ID: 271825
Date Deposited: 22 Dec 2010 11:21
Last Modified: 02 Mar 2012 12:22
Contributors: Kukharenka, E (Author)
Frety, N (Author)
Shepelevich, VG (Author)
Tedenac, JC (Author)
Date: 2002
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/271825

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