An Ultra Low Power MMIC Amplifier Using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As Metamorphic HEMT
Hwang, C. J. , Lok, L. B. , Chong, Harold, Holland, M. , Thayne, I. G. and Elgaid, K. (2010) An Ultra Low Power MMIC Amplifier Using 50nm delta doped In0.52Al0.48As / In0.53Ga0.47As Metamorphic HEMT. IEEE Electron Device Letters, 31, (11), 1230-1232.
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Description/Abstract
An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit process.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 271943 |
| Date Deposited: | 24 Jan 2011 16:45 |
| Last Modified: | 02 Mar 2012 12:22 |
| Contributors: | Hwang, C. J. (Author) Lok, L. B. (Author) Chong, Harold (Author) Holland, M. (Author) Thayne, I. G. (Author) Elgaid, K. (Author) |
| Date: | 11 November 2010 |
| Status: | Published |
| Publisher: | IEEE |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/271943 |
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