Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy
Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample
025701-1-025701-3
Hanafusa, H.
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Hirose, N.
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Kasamatsu, A.
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Mimura, T.
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Matsui, T.
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Chong, H.
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Mizuta, H.
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Suda, Y.
7053a361-c6a4-4966-a498-5dba35712b78
January 2011
Hanafusa, H.
e48ea1d5-a4c0-47e4-b464-842a596e9261
Hirose, N.
b3ff6c36-c555-4769-8b54-02ec17d27b37
Kasamatsu, A.
cd727b45-037e-4830-9f85-d464f7fc106f
Mimura, T.
79a58922-c72e-4441-9f0e-242cb0514b75
Matsui, T.
2b8d25ec-014e-4182-af58-5b9ba745bc86
Chong, H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Mizuta, H.
f14d5ffc-751b-472b-8dba-c8518c6840b9
Suda, Y.
7053a361-c6a4-4966-a498-5dba35712b78
Hanafusa, H., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Chong, H., Mizuta, H. and Suda, Y.
(2011)
Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy.
Applied Physics Express, 4, .
(doi:10.1143/APEX.4.025701).
Abstract
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1-xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample
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Published date: January 2011
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 271944
URI: http://eprints.soton.ac.uk/id/eprint/271944
PURE UUID: 221481fe-967e-4494-97ef-a2702a5fe950
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Date deposited: 24 Jan 2011 16:49
Last modified: 15 Mar 2024 03:30
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Author:
H. Hanafusa
Author:
N. Hirose
Author:
A. Kasamatsu
Author:
T. Mimura
Author:
T. Matsui
Author:
H. Chong
Author:
H. Mizuta
Author:
Y. Suda
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