Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
Hanafusa, H., Hirose, N., Kasamatsu, A., Mimura, T., Matsui, T., Chong, H. M. H., Mizuta, H. and Suda, Y. (2011) Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers. Applied Physics Express, 4, 024102-1-024102-3.
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Description/Abstract
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 271951 |
| Date Deposited: | 27 Jan 2011 10:20 |
| Last Modified: | 01 Mar 2012 13:48 |
| Contributors: | Hanafusa, H. (Author) Hirose, N. (Author) Kasamatsu, A. (Author) Mimura, T. (Author) Matsui, T. (Author) Chong, H. M. H. (Author) Mizuta, H. (Author) Suda, Y. (Author) |
| Date: | January 2011 |
| Status: | Published |
| Publisher: | The Japan Society of Applied Physics |
| Further Information: | Google Scholar |
| ISI Citation Count: | 2 |
| URI: | http://eprints.soton.ac.uk/id/eprint/271951 |
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