Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
Hanafusa, H, Hirose, N, Kasamatsu, A, Mimura, T, Matsui, T, Chong, Harold, Mizuta, Hiroshi and Suda, Y (2011) Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy. Applied Physics Express, 4, 025701-1-025701-3.
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Description/Abstract
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1�xGex -layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman spectroscopy (TERS) system, clarify that an s-Si sample formed by our previously proposed sputter epitaxy method has a smoother and more uniformly strained surface than an s-Si sample formed by gas-source molecular beam epitaxy. The TERS analyses suggest that the compositional fluctuation of the underlying Si1�xGex buffer layer is largely related to the weak s-Si strain fluctuation of the sputtered sample.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO |
| Item ID: | 271959 |
| Date Deposited: | 28 Jan 2011 18:08 |
| Last Modified: | 25 Aug 2012 02:23 |
| Contributors: | Hanafusa, H (Author) Hirose, N (Author) Kasamatsu, A (Author) Mimura, T (Author) Matsui, T (Author) Chong, Harold (Author) Mizuta, Hiroshi (Author) Suda, Y (Author) |
| Date: | 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 4 |
| URI: | http://eprints.soton.ac.uk/id/eprint/271959 |
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