Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
Hanafusa, H, Hirose, N, Kasamatsu, A, Miura, T, Matsui, T, Chong, Harold, Mizuta, Hiroshi and Suda, Y (2011) Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers. Applied Physics Express, 4, 024102-1-024102-3.
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Description/Abstract
We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current–voltage (I–V) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the I–V curves are attributed to hole tunneling through the first heavy- and light-hole energy levels.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 271960 |
| Date Deposited: | 28 Jan 2011 18:18 |
| Last Modified: | 25 Aug 2012 02:23 |
| Contributors: | Hanafusa, H (Author) Hirose, N (Author) Kasamatsu, A (Author) Miura, T (Author) Matsui, T (Author) Chong, Harold (Author) Mizuta, Hiroshi (Author) Suda, Y (Author) |
| Date: | 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 2 |
| URI: | http://eprints.soton.ac.uk/id/eprint/271960 |
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