Improved DFT for Testing Power Switches


Khursheed, Syed Saqib, Yang, Sheng, Al-Hashimi, Bashir, Huang, Xiaoyu and Flynn, David (2011) Improved DFT for Testing Power Switches. In, 16th IEEE European Test Symposium (ETS 2011), Trondheim, Norway, 23 - 27 May 2011.

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Description/Abstract

Power switches are used as part of power-gating technique to reduce leakage power of a design. To the best of our knowledge this is the first study that analyzes recently proposed DFT solutions for testing power switches through SPICE simulations on a number of ISCAS benchmarks and presents the following contributions. It provides evidence of long discharge time when power switches are turned-off, when testing power switches using available DFT solutions. This may either lead to false test (false-fail or false-pass) or long test time. This problem is addressed through a simple and effective DFT solution to reduce the discharge time. The proposed DFT solution has been validated through SPICE simulation and shows an improvement in discharge time of at least 28-times, based on a number of ISCAS benchmarks synthesized with a 90-nm gate library.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Event Dates: 23-27 May, 2011
Keywords: Sleep transistor, power switch, leakage power management, test time overhead, DFT, design for test
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > Electronic & Software Systems
Item ID: 272031
Date Deposited: 15 Feb 2011 19:18
Last Modified: 19 Jul 2012 12:30
Contributors: Khursheed, Syed Saqib (Author)
Yang, Sheng (Author)
Al-Hashimi, Bashir (Author)
Huang, Xiaoyu (Author)
Flynn, David (Author)
Date: 15 February 2011
Additional Information: Event Dates: 23-27 May, 2011
Status: Published
Further Information:Google Scholar
ISI Citation Count:0
URI: http://eprints.soton.ac.uk/id/eprint/272031

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