U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio

Moktadir, Zakaria, Boden, Stuart, Ghiass, Mohammad Adel, Rutt, Harvey and Mizuta, Hiroshi (2011) U-shaped bilayer graphene channel transistor with very high Ion/Ioff ratio. Electronics Letters, 47, (3)

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Description/Abstract

A novel graphene transistor architecture is reported. The transistor has a U-shaped geometry and was fabricated using a gallium focused ion beam (FIB). The channel conductance was tuned with a back gate. The Ion/Ioff ratio exceeded 10E5.

Item Type:	Article
Divisions:	Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID:	272034
Date Deposited:	16 Feb 2011 19:26
Last Modified:	01 Mar 2012 13:42
Contributors:	Moktadir, Zakaria (Author) Boden, Stuart (Author) Ghiass, Mohammad Adel (Author) Rutt, Harvey (Author) Mizuta, Hiroshi (Author)
Date:	February 2011
Status:	Published
Further Information:	Google Scholar
URI:	http://eprints.soton.ac.uk/id/eprint/272034

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