Theory of quasiballistic transport through nanocrystalline silicon dots
Mori, Nobuya, Minari, Hideki, Uno, Shigeyasu, Mizuta, Hiroshi and Koshida, Nobuyoshi (2011) Theory of quasiballistic transport through nanocrystalline silicon dots. Applied Physics Letters, 98, 062104.
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Description/Abstract
A model to describe the underlying physics of high-energy electron emission from a porous silicon diode is presented. The model is based on an atomistic tight-binding method combined with semiclassical Monte Carlo simulation. It well reproduces essential features of experimental findings. An initial acceleration region is shown to play a crucial role in generating quasiballistic electron emission.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272035 |
| Date Deposited: | 16 Feb 2011 19:34 |
| Last Modified: | 25 Aug 2012 02:25 |
| Contributors: | Mori, Nobuya (Author) Minari, Hideki (Author) Uno, Shigeyasu (Author) Mizuta, Hiroshi (Author) Koshida, Nobuyoshi (Author) |
| Date: | 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 4 |
| URI: | http://eprints.soton.ac.uk/id/eprint/272035 |
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