Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors
Uchino, T., Ayre, G.N., Smith, D.C., Hutchison, J.L., de Groot, C.H. and Ashburn, P. (2011) Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors. Electrochemical Society Letters, 156, (8), k144-k148.
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Description/Abstract
The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is demonstrated. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode peaks and the absence of the disorder induced D-band, indicating single walled CNTs with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/dec.
| Item Type: | Article |
|---|---|
| Keywords: | carbon nanotubes, field effect transistors, germanium |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272077 |
| Date Deposited: | 02 Mar 2011 11:26 |
| Last Modified: | 02 Mar 2012 12:42 |
| Contributors: | Uchino, T. (Author) Ayre, G.N. (Author) Smith, D.C. (Author) Hutchison, J.L. (Author) de Groot, C.H. (Author) Ashburn, P. (Author) |
| Date: | 2 March 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272077 |
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