Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors


Ghiass, Mohammad Adel, Armini, Silvia, Carli, Marta, Maestre Caro, Arantxa, Cherman, Vladimir, Ogi, Jun, Oda, Shunri, Moktadir, Zakaria, Tsuchiya, Yoshishige and Mizuta, Hiroshi (2011) Temperature insensitive conductance detection with surface-functionalised silicon nanowire sensors. Microelectronic Engineering, 88, (8), 1753-1756.

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Description/Abstract

The effects of suspension and functionalisation on electrical conduction of silicon nanowires (SiNWs) are experimentally investigated towards highly sensitive chemical and biological detection applications. The conductance is found to be affected by the suspension process, while it shows the similar trend against the temperature before and after the suspension. The reduction of conductance after the functionalisation with NH2 self-assembled monolayer/glutaraldehyde/biotin can be explained based on the assumption that there is a charge transfer from the SiNW to the molecular layers. The temperature insensitive conductance found in the functionalised SiNWs experimentally for the first time is expected to be extremely useful for practical sensing applications.

Item Type: Article
ISSNs: 0167-9317
Related URLs:
Keywords: Silicon nanowire; Functionalisation; Chemical/biological sensing; Temperature stability
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 272090
Date Deposited: 08 Mar 2011 20:30
Last Modified: 25 Aug 2012 02:27
Contributors: Ghiass, Mohammad Adel (Author)
Armini, Silvia (Author)
Carli, Marta (Author)
Maestre Caro, Arantxa (Author)
Cherman, Vladimir (Author)
Ogi, Jun (Author)
Oda, Shunri (Author)
Moktadir, Zakaria (Author)
Tsuchiya, Yoshishige (Author)
Mizuta, Hiroshi (Author)
Date: 13 February 2011
Status: Published
Publisher: Elsevier
Further Information:Google Scholar
ISI Citation Count:1
URI: http://eprints.soton.ac.uk/id/eprint/272090

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