Fabrication of ZnO Nanowire Device Using Top-Down Approach
Mohamed Sultan, Suhana, Sun, Kai, Partridge, J, Allen, M, Ashburn, Peter and Chong, Harold (2011) Fabrication of ZnO Nanowire Device Using Top-Down Approach. At 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork,Ireland, 14 - 16 Mar 2011. IEEE, 77-79.
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Description/Abstract
ZnO nanowire devices were fabricated from top-down using optical lithography. The nanowires are formed from anisotropic etch of 100 nm Filtered Cathodic Vacuum Arc (FCVA) deposited ZnO thin film. The nanowires are characterized using SEM and Raman spectroscopy via image mapping. The current-voltage characteristics showed a typical ohmic behaviour after contact annealing, reflecting the influence of the lowering of contact barriers between the ZnO nanowire device and the Al metal electrode.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 14/03/2011-16/03/2011 |
| ISSNs: | 978145770091011 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272257 |
| Date Deposited: | 05 May 2011 18:49 |
| Last Modified: | 02 Mar 2012 14:06 |
| Contributors: | Mohamed Sultan, Suhana (Author) Sun, Kai (Author) Partridge, J (Author) Allen, M (Author) Ashburn, Peter (Author) Chong, Harold (Author) |
| Date: | 14 March 2011 |
| Additional Information: | Event Dates: 14/03/2011-16/03/2011 |
| Status: | Published |
| Publisher: | IEEE |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272257 |
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