Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodes

Usgaocar, A.R., de Groot, C.H., Boulart, Cédric, Castillo, Alain and Chavagnac, Valérie (2012) Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodes. [in special issue: Eurosensors XXIV, 2010] Sensors and Actuators B: Chemical, 170, 176-181. (doi:10.1016/j.snb.2011.06.022).


[img] PDF - Version of Record
Restricted to System admin

Download (486Kb) | Request a copy


The use of electrodeposited PdNi-Si Schottky barriers as low power Hydrogen sensors is investigated. The Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and Schottky barrier current. In this work we show that electrodeposited Pd(Ni)-Si Schottky barriers exhibit very low reverse bias currents compared to evaporated Schottky diodes. The Schottky diodes were fabricated on 0.5-1.5 ohmcm 100 n-type Si by electrodeposition of PdNi followed by evaporation of Aluminium contact pads. Electrical measurements at different Hydrogen pressures were performed on back to back Schottky diodes in a vacuum chamber using pure Nitrogen and a 5% Hydrogen-Nitrogen mixture. Very low currents of 1nA were measured in the absence of Hydrogen. Large increases in the currents, upto a factor of 100, were observed upon exposure to different Hydrogen partial pressures. A back to back configuration forms a device that draws extremely low power when idle. The low idle current, simplicity of the fabrication process and ability to easily integrate with conventional electronics proves the suitability of electrodeposited PdNi-Si Schottky barriers as low power Hydrogen sensors.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/j.snb.2011.06.022
ISSNs: 0925-4005 (print)
Keywords: schottky barriers, hydrogen sensors, electrodeposition, PdNi alloys
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TP Chemical technology
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 272569
Accepted Date and Publication Date:
31 July 2012Published
17 May 2012Made publicly available
Date Deposited: 13 Jul 2011 09:46
Last Modified: 31 Mar 2016 14:21
Spintronic device physics in Si/Ge Heterostructures
Funded by: EPSRC (EP/J002968/1)
Led by: Cornelis Hendrik de Groot
27 March 2012 to 26 September 2015
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/272569

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics