Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation

Hakim, M M A, Tan, L, Buiu, O, Redman-White, W, Hall, S and Ashburn, P (2009) Improved sub-threshold slope in short channel vertical MOSFETs using FILOX oxidation. Solid State Electronics, 53, 753-759.

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Item Type:	Article
Divisions:	Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID:	272584
Date Deposited:	20 Jul 2011 00:12
Last Modified:	23 Aug 2012 04:10
Contributors:	Hakim, M M A (Author) Tan, L (Author) Buiu, O (Author) Redman-White, W (Author) Hall, S (Author) Ashburn, P (Author)
Date:	2009
Status:	Published
Further Information:	Google Scholar
ISI Citation Count:	4
URI:	http://eprints.soton.ac.uk/id/eprint/272584

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