Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots


Lin, Y. P., Husain, M. K., Alkhalil, F. M., Chong, H. M. H., Ferguson, A. J. and Mizuta, H. (2011) Design and fabrication of single electron spin qubits in lithographically defined silicon quantum dots. At Quantum information processing and communication international conference at eth Zurich, Zurich, 05 - 09 Sep 2011. quantum information processing and communication international conference at eth zurich, 112-112.

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Description/Abstract

Electron spins in Si quantum dots (QDs) provide an attractive alternative to their GaAs conterparts due to their much longer spin relaxation times[1]. We realise a pair of SOI-based double quantum dot (DQD) transistors facing each other with only a 50nm separation via E-Beam lithography and high resolution HSQ resist. A VLSI compatible fabrication process is implemented allowing for future scalability in quantum systems. We propose a new method of single electron detection verified by Monte-Carlo based simulations making use of the periodicity in the charge stability diagram of a DQD.

Item Type: Conference or Workshop Item (Poster)
Additional Information: Event Dates: September 5-9, 2011
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 272666
Date Deposited: 15 Aug 2011 08:40
Last Modified: 02 Mar 2012 12:42
Contributors: Lin, Y. P. (Author)
Husain, M. K. (Author)
Alkhalil, F. M. (Author)
Chong, H. M. H. (Author)
Ferguson, A. J. (Author)
Mizuta, H. (Author)
Date: 9 June 2011
Additional Information: Event Dates: September 5-9, 2011
Status: Published
Publisher: quantum information processing and communication international conference at eth zurich
Contact Email Address: ypl1g10@ecs.soton.ac.uk
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/272666

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