Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs


Husain, Muhammad, Li, Xiaoli and De Groot, Kees (2009) Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs. At International Semiconductor Device Research Symposium, University of Maryland, College Park, MD, USA, 09 - 11 Dec 2009.

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Item Type: Conference or Workshop Item (Speech)
Additional Information: Event Dates: December 9-11, 2009
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 272685
Date Deposited: 19 Aug 2011 11:22
Last Modified: 27 Mar 2014 20:18
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/272685

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