Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs
Husain, Muhammad, Li, Xiaoli and De Groot, Kees (2009) Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs. At International Semiconductor Device Research Symposium, University of Maryland, College Park, MD, USA, 09 - 11 Dec 2009.
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| Item Type: | Conference or Workshop Item (Speech) |
|---|---|
| Additional Information: | Event Dates: December 9-11, 2009 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272685 |
| Date Deposited: | 19 Aug 2011 11:22 |
| Last Modified: | 01 Mar 2012 12:14 |
| Contributors: | Husain, Muhammad (Author) Li, Xiaoli (Author) De Groot, Kees (Author) |
| Date: | 2009 |
| Additional Information: | Event Dates: December 9-11, 2009 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272685 |
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