Husain, Muhammad, Li, Xiaoli and de Groot, Kees (2009) Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs. International Semiconductor Device Research Symposium, University of Maryland, College Park, MD, United States. 09 - 11 Dec 2009.
Record type:
Conference or Workshop Item
(Other)
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Published date: 2009
Additional Information:
Event Dates: December 9-11, 2009
Venue - Dates:
International Semiconductor Device Research Symposium, University of Maryland, College Park, MD, United States, 2009-12-09 - 2009-12-11
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 272685
URI: http://eprints.soton.ac.uk/id/eprint/272685
PURE UUID: 51731a0b-9d85-443a-bfde-c68a2c4e20c3
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Date deposited: 19 Aug 2011 11:22
Last modified: 15 Mar 2024 03:11
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Contributors
Author:
Muhammad Husain
Author:
Xiaoli Li
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