Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications
Mohamed Sultan, Suhana, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Al Hakim, Mohammad, Sun, Kai, Ashburn, Peter and Chong, Harold (2011) Remote Plasma Atomic Layer Deposition of ZnO for Thin Film Electronic Applications. At Micro and Nano Engineering , Berlin, Germany, 19 - 23 Sep 2011.
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Description/Abstract
This paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma ALD on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 19-23 September 2011 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272932 |
| Date Deposited: | 17 Oct 2011 08:20 |
| Last Modified: | 02 Mar 2012 12:22 |
| Contributors: | Mohamed Sultan, Suhana (Author) Clark, Owain (Author) Ben Masaud, Taha (Author) Fang, Q. (Author) Gunn, R. (Author) Al Hakim, Mohammad (Author) Sun, Kai (Author) Ashburn, Peter (Author) Chong, Harold (Author) |
| Date: | 19 September 2011 |
| Additional Information: | Event Dates: 19-23 September 2011 |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272932 |
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