Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene
Johari, Z., Schmidt, Marek E., De Groot, Kees, Ismail, R. and Chong, Harold (2011) Raman Spectroscopy and Electrical Characterisation of Reactive Ion Etched Multilayer Graphene. At Micro and Nano Engineering , Berlin, Germany, 19 - 23 Sep 2011.
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Description/Abstract
A reactive ion etching process (RIE) of multi-layer graphene (MLG) has been developed to obtain tri-layer (TLG) or bi-layer graphene (BLG). A controllable graphene etch rate of 0.19 nm/sec has been achieved by using oxygen plasma. Graphene D, G and 2D band characteristics have been obtained by Raman spectroscopy and rapid thermal annealing (RTA) has shown to reduce defect band in etched graphene layer. A two terminals device with etched tri-layer graphene and back gate has been fabricated. Measurement shows drain current variation with gate voltage bias and mobility of 52 cm2/V-s has been achieved.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Additional Information: | Event Dates: 19-23 September 2011 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 272933 |
| Date Deposited: | 17 Oct 2011 08:25 |
| Last Modified: | 01 May 2012 10:57 |
| Contributors: | Johari, Z. (Author) Schmidt, Marek E. (Author) De Groot, Kees (Author) Ismail, R. (Author) Chong, Harold (Author) |
| Date: | 19 September 2011 |
| Additional Information: | Event Dates: 19-23 September 2011 |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/272933 |
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