Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD
Mohamed Sultan, Suhana, Sun, Kai, Clark, Owain, Ben Masaud, Taha, Fang, Q., Gunn, R., Partridge, J., Allen, M. W., Ashburn, Peter and Chong, Harold (2012) Electrical Characteristics of Top-Down ZnO Nanowire Transistors Using Remote Plasma ALD. IEEE Electron Device Letters, 33, (2), 203-205.
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Description/Abstract
Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 μm, are then fabricated using these 80 nm × 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage ≥75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with 1/L, as expected for long-channel FETs. A respectable ION/IOFF ratio of 2 × 106 is obtained.
| Item Type: | Article |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 273208 |
| Date Deposited: | 13 Feb 2012 14:24 |
| Last Modified: | 30 Jul 2012 09:25 |
| Contributors: | Mohamed Sultan, Suhana (Author) Sun, Kai (Author) Clark, Owain (Author) Ben Masaud, Taha (Author) Fang, Q. (Author) Gunn, R. (Author) Partridge, J. (Author) Allen, M. W. (Author) Ashburn, Peter (Author) Chong, Harold (Author) |
| Date: | February 2012 |
| Status: | Published |
| Publisher: | IEEE |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/273208 |
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