Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres
He, Rongrui, Sazio, Pier J. A., Peacock, Anna C., Healy, Noel, Sparks, Justin R., Krishnamurthi, Mahesh, Gopalan, Venkatraman and Badding, John V. (2012) Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres. Nature Photonics, 6, (3), 174-179. (doi:10.1038/NPHOTON.2011.352).
Full text not available from this repository.
The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
|Date Deposited:||06 Mar 2012 13:41|
|Last Modified:||26 Apr 2013 05:25|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)