Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion
Pollard, M.E., Knight, K.J., Parker, G.J., Hewak, D.W. and Charlton, M.D.B. (2012) Fabrication of photonic crystals in rare-earth doped chalcogenide glass films for enhanced upconversion. In, Jiang, Shibin, Digonnet, Michel J.F. and Dries, J. Christopher (eds.) Optical Components and Materials IX. Photonics West 2012 Bellingham, US, The International Society for Optical Engineering. (Proceedings of SPIE, 8257). (doi:10.1117/12.908014).
Gallium lanthanum oxysulfide (GLSO) is a promising host material for observing strong upconversion emission from trivalent rare-earth ions such as erbium (Er3+). Its attractive properties include high rare-earth solubility due to the lanthanum content of the glass former, a high refractive index (n = 2.2 at 550nm) for high radiative efficiency, and a low maximum phonon energy of approximately 425cm-1. Photonic crystals meanwhile can provide controlled light extraction, and may be capable of suppressing unwanted IR emission from lower lying metastable states. Here, we describe the fabrication of photonic crystals in annealed films of Er3+-doped GLSO deposited by RF sputtering. The most intense visible upconversion emission is observed in films annealed at 550°C, close to the bulk glass transition temperature. Hexagonal lattice photonic crystals are subsequently milled into the films using a focused ion beam (FIB). The milling parameters are optimized to produce the most vertical sidewall profile.
|Item Type:||Book Section|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical Sciences and Engineering > Electronics and Computer Science
Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
|Date Deposited:||28 Mar 2012 13:35|
|Last Modified:||27 Mar 2014 20:20|
|Further Information:||Google Scholar|
|ISI Citation Count:||0|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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