High dielectric tunability in lead niobate pyrochlore films
Mirsaneh, Mehdi, Hayden, Brian E., Furman, E., Perini, S., Lanagan, M.T. and Reaney, I.M. (2012) High dielectric tunability in lead niobate pyrochlore films. Applied Physics Letters, 100, 82901-82903. (doi:10.1063/1.3687722).
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High throughput physical vapor deposition has been used to grow crystalline PbnNb2O5+n (0.6 < n < 4.6) thin films on a single chip. Relative permittivity (ɛr) and dielectric loss (tan δ) were frequency independent between 100 Hz and 1 MHz and −60 °C–100 °C. Dielectric tunability achieved a maximum in the cubic pyrochlore phase (Pb1.2Nb2O6.2, PN, Pb ≈ 38%) of ∼26% (0.44 MV/cm). In comparison to barium strontium titanate (BST) and bismuth zinc niobate (BZN), PN exhibited attractive tan δ ∼ 0.0009 (0.013–0.005 in BST and 0.008–0.0005 in BZN), comparable or superior ɛr of 419 (450 in BST and 160–220 in BZN) and 26% tunability (∼50% in BST and 3.5% in BZN at equivalent fields). PN is thus considered an ideal candidate for tunable device applications.
|Keywords:||dialectric losses, dielectric thin films, lead compounds, permittivity, thin film devices, vapour decomposition|
|Divisions:||Faculty of Natural and Environmental Sciences > Chemistry > Electrochemistry
|Date Deposited:||16 Apr 2012 15:19|
|Last Modified:||16 Apr 2012 15:20|
|Contributors:||Mirsaneh, Mehdi (Author)
Hayden, Brian E. (Author)
Furman, E. (Author)
Perini, S. (Author)
Lanagan, M.T. (Author)
Reaney, I.M. (Author)
|Date:||21 February 2012|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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