High speed silicon optical modulator with self aligned fabrication process
Thomson, D. J., Gardes, F. Y., Reed, G. T., Milesi, F. and Fedeli, J-M (2010) High speed silicon optical modulator with self aligned fabrication process. Optics Express, 18, (18), 19064-19069. (doi:10.1364/OE.18.019064).
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With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6dB modulation depth at 10Gbit/s from a 3.5mm long device.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||03 May 2012 13:53|
|Last Modified:||26 Apr 2013 05:49|
|Contributors:||Thomson, D. J. (Author)
Gardes, F. Y. (Author)
Reed, G. T. (Author)
Milesi, F. (Author)
Fedeli, J-M (Author)
|Date:||23 August 2010|
|Further Information:||Google Scholar|
|ISI Citation Count:||16|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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