Laser erasable implanted gratings for integrated silicon photonics


Loiacono, Renzo, Reed, Graham T., Mashanovich, Goran Z., Gwilliam, Russell, Henley, Simon J., Hu, Youfang, Feldesh, Ran and Jones, Richard (2011) Laser erasable implanted gratings for integrated silicon photonics. Optics Express, 19, (11), 10728-10734. (doi:10.1364/OE.19.010728). (PMID:21643329).

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Description/Abstract

In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000ìm. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics

Item Type: Article
ISSNs: 1094-4087 (electronic)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 337744
Date Deposited: 03 May 2012 14:20
Last Modified: 19 Jul 2012 13:31
Contributors: Loiacono, Renzo (Author)
Reed, Graham T. (Author)
Mashanovich, Goran Z. (Author)
Gwilliam, Russell (Author)
Henley, Simon J. (Author)
Hu, Youfang (Author)
Feldesh, Ran (Author)
Jones, Richard (Author)
Date: 23 May 2011
Status: Published
Further Information:Google Scholar
ISI Citation Count:3
URI: http://eprints.soton.ac.uk/id/eprint/337744

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