High contrast 40Gbit/s optical modulation in silicon


Thomson, D.J., Gardes, F.Y., Hu, Y., Mashanovich, G., Fournier, M., Grosse, P., Fedeli, J-M. and Reed, G.T. (2011) High contrast 40Gbit/s optical modulation in silicon. Optics Express, 19, (12), 11507-11516. (doi:10.1364/OE.19.011507). (PMID:21716382).

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Description/Abstract

Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively

Item Type: Article
ISSNs: 1094-4087 (electronic)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
Item ID: 337777
Date Deposited: 03 May 2012 14:18
Last Modified: 10 Jun 2013 16:01
Contributors: Thomson, D.J. (Author)
Gardes, F.Y. (Author)
Hu, Y. (Author)
Mashanovich, G. (Author)
Fournier, M. (Author)
Grosse, P. (Author)
Fedeli, J-M. (Author)
Reed, G.T. (Author)
Date: 6 June 2011
Status: Published
Further Information:Google Scholar
ISI Citation Count:45
URI: http://eprints.soton.ac.uk/id/eprint/337777

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