Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range
Nedeljkovic, Milos, Soref, Richard and Mashanovich, Goran Z. (2011) Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range. IEEE Photonics Journal, 3, (6), 1171-1180. (doi:10.1109/JPHOT.2011.2171930).
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We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range
|Keywords:||absorption, electrooptic modulators, semiconductor impurities, silicon|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
|Date Deposited:||03 May 2012 14:21|
|Last Modified:||20 Jun 2012 10:21|
|Contributors:||Nedeljkovic, Milos (Author)
Soref, Richard (Author)
Mashanovich, Goran Z. (Author)
|Further Information:||Google Scholar|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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