Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range
Nedeljkovic, Milos, Soref, Richard and Mashanovich, Goran Z. (2011) Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14µm infrared wavelength range. IEEE Photonics Journal, 3, (6), 1171-1180. (doi:10.1109/JPHOT.2011.2171930).
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Description/Abstract
We present relationships for the free-carrier-induced electrorefraction and electroabsorption in crystalline silicon over the 1-14-μm wavelength range. Electroabsorption modulation is calculated from impurity-doping spectra taken from the literature, and a Kramers-Kronig analysis of these spectra is used to predict electrorefraction modulation. More recent experimental results for terahertz absorption of silicon are also used to improve the commonly used 1.3- and 1.55-μm equations. We examine the wavelength dependence of electrorefraction and electroabsorption, finding that the predictions suggest longer wave modulator designs will, in many cases, be different from those used in the telecom range
| Item Type: | Article |
|---|---|
| ISSNs: | 1943-0655 (print) 1943-0655 (electronic) |
| Keywords: | absorption, electrooptic modulators, semiconductor impurities, silicon |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 337781 |
| Date Deposited: | 03 May 2012 14:21 |
| Last Modified: | 20 Jun 2012 10:21 |
| Contributors: | Nedeljkovic, Milos (Author) Soref, Richard (Author) Mashanovich, Goran Z. (Author) |
| Date: | December 2011 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/337781 |
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