Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application


Huang, C. C., Gholipour, B., Knight, K., Ou, J. Y. and Hewak, D. W. (2012) Deposition and characterization of CVD-grown Ge-Sb thin film device for phase-change memory application. Advances in OptoElectronics, 2012, part 840348, 1-7. (doi:10.1155/2012/840348).

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Description/Abstract

Germanium antimony (Ge-Sb) thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD). Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875 °C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM) with energy dispersive X-ray analysis (EDX), and X-ray diffraction (XRD) techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 2.2 - 2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase change memory and optical, electronic and plasmonic switching.

Item Type: Article
ISSNs: 1687-563X (print)
1687-5648 (electronic)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
ePrint ID: 337817
Date Deposited: 03 May 2012 15:42
Last Modified: 27 Mar 2014 20:21
URI: http://eprints.soton.ac.uk/id/eprint/337817

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