Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization
Sun, Kai, Hakim, M.M.A. and Ashburn, P (2012) Rectangular polysilicon nanowires by top-down lithography, dry etch and metal induced lateral crystallization. Electrochemical and Solid-State Letters, 15, (3), H62-H64. (doi:10.1149/2.011203esl).
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Description/Abstract
In this work, we demonstrate a low temperature polysilicon nanowire fabrication process using amorphous silicon deposition over an oxide pillar, anisotropic reactive ion etch and metal-induced lateral crystallization (MILC). The fabricated nanowires are rectangular, with a width and height of around 100 nm. MILC is successfully achieved at temperatures down to 450◦C, making the process compatible with glass substrates and hence suitable for low cost, disposable biosensors. Crystallisation lengths of 4.1 μm and 0.8 μm are obtained for 15 hour anneals at 480◦C and 450◦C, respectively
| Item Type: | Article |
|---|---|
| ISSNs: | 1099-0062 (print) 1944-8775 (electronic) |
| Subjects: | Q Science > QD Chemistry T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 337929 |
| Date Deposited: | 04 May 2012 09:30 |
| Last Modified: | 26 Jul 2012 00:28 |
| Contributors: | Sun, Kai (Author) Hakim, M.M.A. (Author) Ashburn, P (Author) |
| Funder: | Engineering and Physical Sciences Research Council |
| Date: | March 2012 |
| Status: | Published |
| Further Information: | Google Scholar |
| ISI Citation Count: | 1 |
| URI: | http://eprints.soton.ac.uk/id/eprint/337929 |
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