High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode


Gardes, F.Y., Brimont, A., Sanchis, P., Rasigade, G., Marris-Morini, D., O'Faolain, L., Dong, F., Fedeli, J.M., Dumon, P., Vivien, L., Krauss, T.F., Reed, G.T. and Martí, J. (2009) High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode. Optics Express, 17, (24), 21986-21991. (doi:10.1364/OE.17.021986).

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Description/Abstract

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Item Type: Article
ISSNs: 1094-4087 (print)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 337961
Date Deposited: 08 May 2012 13:21
Last Modified: 23 Aug 2012 04:17
Contributors: Gardes, F.Y. (Author)
Brimont, A. (Author)
Sanchis, P. (Author)
Rasigade, G. (Author)
Marris-Morini, D. (Author)
O'Faolain, L. (Author)
Dong, F. (Author)
Fedeli, J.M. (Author)
Dumon, P. (Author)
Vivien, L. (Author)
Krauss, T.F. (Author)
Reed, G.T. (Author)
Martí, J. (Author)
Date: 23 November 2009
Status: Published
Further Information:Google Scholar
ISI Citation Count:51
URI: http://eprints.soton.ac.uk/id/eprint/337961

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