High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode


Gardes, F.Y., Brimont, A., Sanchis, P., Rasigade, G., Marris-Morini, D., O'Faolain, L., Dong, F., Fedeli, J.M., Dumon, P., Vivien, L., Krauss, T.F., Reed, G.T. and Martí, J. (2009) High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode. Optics Express, 17, (24), 21986-21991. (doi:10.1364/OE.17.021986).

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Description/Abstract

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Item Type: Article
ISSNs: 1094-4087 (print)
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
ePrint ID: 337961
Date Deposited: 08 May 2012 13:21
Last Modified: 28 Mar 2014 15:21
Projects:
Unknown (EP/F001428/1)
Funded by: EPSRC (EP/F001428/1)
UNSPECIFIED to UNSPECIFIED
Further Information:Google Scholar
ISI Citation Count:53
URI: http://eprints.soton.ac.uk/id/eprint/337961

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