Realization of fully tunable FinFET double quantum dots with close proximity plunger gates

Alkhalil, F.M., Perez-Barraza, J.I., Husain, M.K., Lin, Y.P., Lambert, N., Chong, H.M.H , Tsuchiya, Y., Williams, D.A., Ferguson, A.J. and Mizuta, H. (2012) Realization of fully tunable FinFET double quantum dots with close proximity plunger gates. In, 12th International Conference on Nanotechnology (IEEE NANO 2012), Birmingham, GB, 20 - 23 Aug 2012. 2pp. (doi:10.1109/NANO.2012.6321993).


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This paper presents the realization of a FinFET double quantum dots transistor on ultrathin silicon-on-insulator. In this platform, three Al FinFET gates surround the Si device layer channel forming electrically tunable potential barriers; Si plunger side gates are included to enable precise control of the quantum dots potential. This device is fabricated using a multi-layer electron beam lithography process that is fully compatible with metal oxide semiconductor technology. Low temperature electrical measurements and coulomb oscillation characteristics have demonstrated the capability of this structure to form double quantum dots with adjustable interdot coupling.

Item Type: Conference or Workshop Item (Paper)
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Subjects: Q Science > QA Mathematics > QA76 Computer software
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 337975
Date Deposited: 09 May 2012 11:55
Last Modified: 14 Apr 2014 11:40
Silicon-based Integrated Single-Spin Quantum Information Technology
Funded by: EPSRC (EP/H016872/1)
4 May 2010 to 30 November 2013
Further Information:Google Scholar
ISI Citation Count:0

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