Temperature dependence of lifetime of 1.3 micron emission from Dy3+-doped Ge-As-S glass modified with very small amount of Ga and CsBr
Choi, Y.G., Curry, R.J. and Hewak, D.W. (2012) Temperature dependence of lifetime of 1.3 micron emission from Dy3+-doped Ge-As-S glass modified with very small amount of Ga and CsBr. In, Photoluminescence in Rare Earths: Photonic Materials and Devices (PRE 12), Kyoto, JP, 28 - 30 Mar 2012.
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It has been known that the measured lifetime of the 1.3 μm emission from Dy3+ ions embedded in sulfur-based chalcogenide glass is dramatically modified upon a least compositional adjustment by Ga+CsBr. For example, greater than ten-fold increase of the measured lifetime is typically observed when less than 1 mol% of Ga+CsBr is introduced to Ge-As-S glass. This novel observation is based on spontaneous atomic rearrangement in the vicinity of Dy3+ ions taking place as a result of the compositional modification as well as the hypersensitivity involved in the (6H9/2, 6F11/2) → 6H15/2 transition.
In an effort to get deepened knowledge on the compositional effect, in this study, we have measured the lifetime of 1.3 μm emission as functions of temperature and concentration of Ga+CsBr. As-rich Ge-As-S glasses unmodified or modified with less than 1.0 mol% of Ga+CsBr were prepared, and then decay profiles for the 1.3 μm emission were recorded at various temperatures.
We observe that the measured lifetime, i.e., the first e-folding time, exhibits a very interesting behavior; for modification of up to ~0.4 mol% the lifetime decreases with increasing temperature, as typically observed for multiphonon relaxation dominated transition. However, when concentration of Ga+CsBr reaches ~0.6 mol%, the lifetime keeps almost constant regardless of temperature change. For further increase of the compositional modification up to ~1.0 mol%, the lifetime increases as temperature increases. This novel behavior is discussed in connection with the local structural changes at around Dy3+ ions, and the resulting changes in the oscillator strength as well as the center of gravity of the thermally coupled (6H9/2, 6F11/2) manifold
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical and Applied Science > Optoelectronics Research Centre
|Date Deposited:||13 Jun 2012 13:24|
|Last Modified:||13 Jun 2012 13:24|
|Contributors:||Choi, Y.G. (Author)
Curry, R.J. (Author)
Hewak, D.W. (Author)
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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