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The effect of dislocation density on the interactions between dislocations and twin boundaries in nanocrystalline materials

The effect of dislocation density on the interactions between dislocations and twin boundaries in nanocrystalline materials
The effect of dislocation density on the interactions between dislocations and twin boundaries in nanocrystalline materials
The interactions between dislocations and twinboundaries (TBs) are significantly affected by both intrinsic material properties and extrinsic factors, including stacking fault energy, the energy barriers for dislocation reactions at TBs, twin thickness and applied stress. In this study, dislocation–TB interactions in grains with different dislocationdensities were investigated and we conclude that the dislocationdensity also affects the dislocation–TB interactions. In a twinned grain with a low dislocationdensity, a dislocation may react with a TB to fully or partially penetrate the TB or to be absorbed by the TB via different dislocation reactions. Alternatively, in a twinned grain with a high dislocationdensity, dislocations tangle with each other and are pinned at the TBs, thereby making it unfavourable for further dislocation reactions to mediate dislocation penetration across the TB. This leads to an accumulation of dislocations at the TBs, raising the local strain energy, which, in turn, is released by the activation of secondary twins by partial dislocation emissions from the other side of the TB
dislocations, twinboundaries, dislocationdensity, nanocrystallinematerials
1359-6454
3181-3189
Ni, S.
c17ef5a0-a786-46ea-8c68-2cddc3c6a9fc
Wang, Y.B.
30d7b540-dc88-4382-867a-28d0354a8495
Liao, X.Z.
f0645a6d-aee1-4d28-aa13-f1b00fdedc41
Figueiredo, R.B.
1b4f5fa6-b201-4435-8f5e-13833fc8d504
Li, H.Q.
f75bd557-296e-47bb-98de-f302465c59f5
Ringer, S.P.
2b986d4b-e93c-4801-9a1b-b16b39c30242
Langdon, T.G.
86e69b4f-e16d-4830-bf8a-5a9c11f0de86
Zhu, Y.T.
ddbd5b30-13ca-45a6-9296-ed5b60811efb
Ni, S.
c17ef5a0-a786-46ea-8c68-2cddc3c6a9fc
Wang, Y.B.
30d7b540-dc88-4382-867a-28d0354a8495
Liao, X.Z.
f0645a6d-aee1-4d28-aa13-f1b00fdedc41
Figueiredo, R.B.
1b4f5fa6-b201-4435-8f5e-13833fc8d504
Li, H.Q.
f75bd557-296e-47bb-98de-f302465c59f5
Ringer, S.P.
2b986d4b-e93c-4801-9a1b-b16b39c30242
Langdon, T.G.
86e69b4f-e16d-4830-bf8a-5a9c11f0de86
Zhu, Y.T.
ddbd5b30-13ca-45a6-9296-ed5b60811efb

Ni, S., Wang, Y.B., Liao, X.Z., Figueiredo, R.B., Li, H.Q., Ringer, S.P., Langdon, T.G. and Zhu, Y.T. (2012) The effect of dislocation density on the interactions between dislocations and twin boundaries in nanocrystalline materials. Acta Materialia, 60 (6-7), 3181-3189. (doi:10.1016/j.actamat.2012.02.026).

Record type: Article

Abstract

The interactions between dislocations and twinboundaries (TBs) are significantly affected by both intrinsic material properties and extrinsic factors, including stacking fault energy, the energy barriers for dislocation reactions at TBs, twin thickness and applied stress. In this study, dislocation–TB interactions in grains with different dislocationdensities were investigated and we conclude that the dislocationdensity also affects the dislocation–TB interactions. In a twinned grain with a low dislocationdensity, a dislocation may react with a TB to fully or partially penetrate the TB or to be absorbed by the TB via different dislocation reactions. Alternatively, in a twinned grain with a high dislocationdensity, dislocations tangle with each other and are pinned at the TBs, thereby making it unfavourable for further dislocation reactions to mediate dislocation penetration across the TB. This leads to an accumulation of dislocations at the TBs, raising the local strain energy, which, in turn, is released by the activation of secondary twins by partial dislocation emissions from the other side of the TB

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More information

e-pub ahead of print date: 10 March 2012
Published date: April 2012
Keywords: dislocations, twinboundaries, dislocationdensity, nanocrystallinematerials
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 340454
URI: http://eprints.soton.ac.uk/id/eprint/340454
ISSN: 1359-6454
PURE UUID: 8cf11b31-69f1-4deb-8782-18a9a3fd0c79
ORCID for T.G. Langdon: ORCID iD orcid.org/0000-0003-3541-9250

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Date deposited: 22 Jun 2012 08:29
Last modified: 15 Mar 2024 03:13

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Contributors

Author: S. Ni
Author: Y.B. Wang
Author: X.Z. Liao
Author: R.B. Figueiredo
Author: H.Q. Li
Author: S.P. Ringer
Author: T.G. Langdon ORCID iD
Author: Y.T. Zhu

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