Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology


Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams , D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi (2012) Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology. At 38th International Conference on Micro and Nano Engineering, 16 - 20 Sep 2012. 1pp. (Submitted).

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Description/Abstract

Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.

Item Type: Conference or Workshop Item (Poster)
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > TP Chemical technology
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 341480
Date Deposited: 24 Jul 2012 14:43
Last Modified: 14 Apr 2014 11:44
Projects:
Silicon-based Integrated Single-Spin Quantum Information Technology
Funded by: EPSRC (EP/H016872/1)
Led by: HIROSHI MIZUTA
4 May 2010 to 30 November 2013
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/341480

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