Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology
Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams , D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi (2012) Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology. At 38th International Conference on Micro and Nano Engineering, 16 - 20 Sep 2012. 1pp. (Submitted).
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Description/Abstract
Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.
| Item Type: | Conference or Workshop Item (Poster) |
|---|---|
| Subjects: | Q Science > QA Mathematics > QA75 Electronic computers. Computer science T Technology > TP Chemical technology |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 341480 |
| Date Deposited: | 24 Jul 2012 14:43 |
| Last Modified: | 24 Jul 2012 16:07 |
| Contributors: | Husain, Muhammad Khaled (Author) Lin, Y.P. (Author) Alkhalil, Feras (Author) Perez-Barraza, J.I. (Author) Lambert, N. (Author) Williams , D. (Author) Ferguson, A.J. (Author) Chong, H.M.H. (Author) Mizuta, Hiroshi (Author) |
| Funder: | EPSRC |
| Date: | 16 September 2012 |
| Status: | Submitted |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/341480 |
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