Husain, Muhammad Khaled, Lin, Y.P., Alkhalil, Feras, Perez-Barraza, J.I., Lambert, N., Williams , D., Ferguson, A.J., Chong, H.M.H. and Mizuta, Hiroshi
Improved silicon quantum dots single electron transfer operation with hydrogen silsesquioxane resist technology.
At 38th International Conference on Micro and Nano Engineering,
16 - 20 Sep 2012.
Hydrogen silsesquioxane (HSQ) is a high resolution electron beam resist that offers a high etch resistance and small line edge roughness. In our previous work, we showed that by using this resist we can fabricate very high density double quantum dot (QD) single electron transistors on silicon-on-insulator (SOI) substrates for applications in quantum information processing. We observed that 80% of 144 fabricated devices had dimensional variations of ±5 nm with a standard deviation of 3.4 nm. Here, we report on the functionality of our Si QD devices through electrical measurements and further HSQ process optimisations, which improve the effective side gates control on single electron operation.
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