Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers
Orava, J., Greer, A.L., Gholipour, B., Hewak, D.W. and Smith, C.E. (2012) Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Applied Physics Letters, 101, (9), 091906. (doi:10.1063/1.4748881).
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Description/Abstract
Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (≥5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.
| Item Type: | Article |
|---|---|
| ISSNs: | 0003-6951 (print) 0003-6951 (electronic) |
| Related URLs: | |
| Keywords: | antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Physical and Applied Science > Optoelectronics Research Centre |
| Item ID: | 343087 |
| Date Deposited: | 24 Sep 2012 11:07 |
| Last Modified: | 29 Apr 2013 16:09 |
| Contributors: | Orava, J. (Author) Greer, A.L. (Author) Gholipour, B. (Author) Hewak, D.W. (Author) Smith, C.E. (Author) |
| Date: | 28 August 2012 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/343087 |
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