Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers

Orava, J., Greer, A.L., Gholipour, B., Hewak, D.W. and Smith, C.E. (2012) Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Applied Physics Letters, 101, (9), 091906. (doi:10.1063/1.4748881).


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Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (>or = 5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.4748881
ISSNs: 0003-6951 (print)
0003-6951 (electronic)
Related URLs:
Keywords: antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
ePrint ID: 343087
Accepted Date and Publication Date:
28 August 2012Published
Date Deposited: 24 Sep 2012 11:07
Last Modified: 20 Dec 2016 13:49
URI: http://eprints.soton.ac.uk/id/eprint/343087

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