Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers
Orava, J., Greer, A.L., Gholipour, B., Hewak, D.W. and Smith, C.E. (2012) Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Applied Physics Letters, 101, (9), 091906. (doi:10.1063/1.4748881).
Phase changes in chalcogenides such as Ge2Sb2Te5 can be exploited in non-volatile random-access memory, with fast crystallization crucial for device operation. Ultra-fast differential scanning calorimetry, heating at rates up to 40,000K s-1, has been used to study the crystallization of amorphous Ge2Sb2Te5 with and without sandwich layers of ZnS-SiO2. At heating rates up to 1000K s-1, the sandwich layers retard crystallization, an effect attributed to crystallization-induced stress. At greater heating rates (≥5000K s-1), and consequently higher crystallization temperatures, the stress is relaxed, and sandwich layers catalyze crystallization. Implications for memory-device performance are discussed.
|Digital Object Identifier (DOI):||doi:10.1063/1.4748881|
|Keywords:||antimony compounds, calorimetry, catalysis, chalcogenide glasses, crystallisation, dielectric materials, differential scanning calorimetry, germanium compounds, heat treatment, II-VI semiconductors, phase change materials, random-access storage, silicon compounds, tellurium compounds, zinc compounds|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
|Date Deposited:||24 Sep 2012 11:07|
|Last Modified:||27 Mar 2014 20:25|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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