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X-ray diffraction area mapping of preferred orientation and phase change in TiO2 Thin films deposited by chemical vapor deposition

X-ray diffraction area mapping of preferred orientation and phase change in TiO2 Thin films deposited by chemical vapor deposition
X-ray diffraction area mapping of preferred orientation and phase change in TiO2 Thin films deposited by chemical vapor deposition
This paper reports on an investigation into the formation of TiO2 thin films, whereby X-ray diffraction is used to map systematic changes in preferred orientation and phase observed throughout the films. The key to this strategy is the recording of X-ray diffraction patterns of specific and isolated areas of a substrate, ensuring this specificity by the use of a small X-ray sample illumination area (approximately 3-5 mm2). A map of the variation in film composition can then be built up by recording such diffraction patterns at regular intervals over the whole substrate. Two titania films will be presented, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, from TiCl4 and ethyl-acetate precursors. The film grown at 450 degrees C showed a systematic change in preferred orientation, while the film grown at 600 degrees C was composed of a mixture of the rutile and anatase phases of TiO2 with the ratio of these phases altering with position on the substrate. The results of physical property measurements and electron microscopy carried out on the films are also reported, conducted at locations identified by the X-ray diffraction mapping procedure as having different compositions, and hence different physical responses. We found that the photocatalytic activity and hydrophobicity were dependent on the rutile: anatase ratio at any given location on the film.
0002-7863
12147-12155
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Green, Mark
4ab8631c-26e9-4c75-a0cf-c09a65375f7c
Parkin, Ivan P.
7f95b9c4-1f9d-441c-8d43-ac8ea2554b85
Hyett, Geoffrey
4f292fc9-2198-4b18-99b9-3c74e7dfed8d
Green, Mark
4ab8631c-26e9-4c75-a0cf-c09a65375f7c
Parkin, Ivan P.
7f95b9c4-1f9d-441c-8d43-ac8ea2554b85

Hyett, Geoffrey, Green, Mark and Parkin, Ivan P. (2006) X-ray diffraction area mapping of preferred orientation and phase change in TiO2 Thin films deposited by chemical vapor deposition. Journal of the American Chemical Society, 128 (37), 12147-12155. (doi:10.1021/ja062766q).

Record type: Article

Abstract

This paper reports on an investigation into the formation of TiO2 thin films, whereby X-ray diffraction is used to map systematic changes in preferred orientation and phase observed throughout the films. The key to this strategy is the recording of X-ray diffraction patterns of specific and isolated areas of a substrate, ensuring this specificity by the use of a small X-ray sample illumination area (approximately 3-5 mm2). A map of the variation in film composition can then be built up by recording such diffraction patterns at regular intervals over the whole substrate. Two titania films will be presented, grown using atmospheric pressure chemical vapor deposition, at 450 and 600 degrees C, from TiCl4 and ethyl-acetate precursors. The film grown at 450 degrees C showed a systematic change in preferred orientation, while the film grown at 600 degrees C was composed of a mixture of the rutile and anatase phases of TiO2 with the ratio of these phases altering with position on the substrate. The results of physical property measurements and electron microscopy carried out on the films are also reported, conducted at locations identified by the X-ray diffraction mapping procedure as having different compositions, and hence different physical responses. We found that the photocatalytic activity and hydrophobicity were dependent on the rutile: anatase ratio at any given location on the film.

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More information

e-pub ahead of print date: 29 August 2006
Published date: 20 September 2006
Organisations: Organic Chemistry: Synthesis, Catalysis and Flow

Identifiers

Local EPrints ID: 346969
URI: http://eprints.soton.ac.uk/id/eprint/346969
ISSN: 0002-7863
PURE UUID: 26b8ee6f-5031-41e7-ac02-38fef7f097cc
ORCID for Geoffrey Hyett: ORCID iD orcid.org/0000-0001-9302-9723

Catalogue record

Date deposited: 14 Feb 2013 16:32
Last modified: 15 Mar 2024 03:45

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Contributors

Author: Geoffrey Hyett ORCID iD
Author: Mark Green
Author: Ivan P. Parkin

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