A dual-gate graphene FET model for circuit simulation - SPICE implementation
A dual-gate graphene FET model for circuit simulation - SPICE implementation
This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3 and it shows a good agreement against experimental data with the NRMS error less than 10%
427-435
Umoh, Ime
2faec90d-20fc-4cf8-9595-f40e7c0f5cc6
Kazmierski, Tomasz
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
6 May 2013
Umoh, Ime
2faec90d-20fc-4cf8-9595-f40e7c0f5cc6
Kazmierski, Tomasz
a97d7958-40c3-413f-924d-84545216092a
Al-Hashimi, Bashir
0b29c671-a6d2-459c-af68-c4614dce3b5d
Umoh, Ime, Kazmierski, Tomasz and Al-Hashimi, Bashir
(2013)
A dual-gate graphene FET model for circuit simulation - SPICE implementation.
IEEE Transactions on Nanotechnology, 12 (3), .
(doi:10.1109/TNANO.2013.2253490).
Abstract
This paper presents a SPICE compatible model of a dual-gate bilayer graphene field effect transistor (GFET). The model describes the functionality of the transistor in all the regions of operation for both hole and electron conduction. We present closed form analytical equations that define the boundary points between the regions to ensure Jacobian continuity for efficient circuit simulator implementation. A saturation displacement current is proposed to model the drain current when the channel becomes ambipolar. The model proposes a quantum capacitance that varies with the surface potential. The model has been implemented in Berkeley SPICE-3 and it shows a good agreement against experimental data with the NRMS error less than 10%
Text
GrapheneFETmodel.pdf
- Accepted Manuscript
Restricted to Registered users only
Available under License Other.
Request a copy
More information
e-pub ahead of print date: 20 March 2013
Published date: 6 May 2013
Organisations:
Nanoelectronics and Nanotechnology, EEE
Identifiers
Local EPrints ID: 350383
URI: http://eprints.soton.ac.uk/id/eprint/350383
PURE UUID: 22790e02-1bb4-4ec7-b350-e32ca78b33ee
Catalogue record
Date deposited: 26 Mar 2013 10:16
Last modified: 14 Mar 2024 13:24
Export record
Altmetrics
Contributors
Author:
Ime Umoh
Author:
Tomasz Kazmierski
Author:
Bashir Al-Hashimi
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics