New generation of resistance thermometers based on Ge films on GaAs substrates
Boltovets, N.S., Dugaev, V.K, Kholevchuk, V.V, McDonald, P.C, Mitin, V.F, Nemish, I.Yu, Pavese, F, Sorokin, P.V., Soloviev, E.A and Venger, E.F (2003) New generation of resistance thermometers based on Ge films on GaAs substrates. In, Mitin, V.F and McDonald, P.C (eds.) Temperature: its Measurement and Control in Science and Industry. Eighth International Temperature Symposium , American Institute of Physics, 399-404. (AIP Conference Proceedings 684, 7).
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Recent results in the development of resistance thermometers based on germanium films on gallium arsenide are summarized. Preliminary results in the development of a new generation of radiation-resistant thermometers and multifunction sensors intended for use in the range 0.03 to 500 K in the presence of high magnetic fields are discussed. These sensors have been produced in an international collaboration recently funded through the EU INTAS program.
|Item Type:||Book Section|
|Keywords:||thermometry, low temperatures|
|Subjects:||T Technology > TJ Mechanical engineering and machinery|
|Divisions:||University Structure - Pre August 2011 > School of Engineering Sciences
|Date Deposited:||17 May 2006|
|Last Modified:||02 Mar 2012 13:07|
|Publisher:||American Institute of Physics|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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