Electrical characterisation of epitaxially grown 3C-SiC films
Electrical characterisation of epitaxially grown 3C-SiC films
3C-SiC have been epitaxially grown through vapour phase expitaxy under a different grow conditions. Key electrical properties of these SiC layers have been characterised by fabrication and measurement of metal-SiC-metal devices. The electrical properties of SiC grown at different conditions have been analysed based on their structural and crystalline quality.
carrier concentration, carrier mobility, electrical, resistivity, silicon carbide (SiC)
617-620
Jiang, Liudi Di
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, Fred
57993657-bc29-465d-a3b6-42900410aa3b
Taysir, Salim
22b81422-37be-46c7-b416-296331d890c5
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
4 September 2012
Jiang, Liudi Di
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, Fred
57993657-bc29-465d-a3b6-42900410aa3b
Taysir, Salim
22b81422-37be-46c7-b416-296331d890c5
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
Jiang, Liudi Di, Zhong, Le, Reed, Fred, Taysir, Salim, Bosi, Matteo and Attolini, Giovanni
(2012)
Electrical characterisation of epitaxially grown 3C-SiC films.
9th European Conference on Silicon Carbide & Related Material (ECSCRM 2012), Saint Petersburg, Russian Federation.
02 - 06 Sep 2012.
.
(doi:10.4028/www.scientific.net/MSF.740-742.617).
Record type:
Conference or Workshop Item
(Paper)
Abstract
3C-SiC have been epitaxially grown through vapour phase expitaxy under a different grow conditions. Key electrical properties of these SiC layers have been characterised by fabrication and measurement of metal-SiC-metal devices. The electrical properties of SiC grown at different conditions have been analysed based on their structural and crystalline quality.
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Published date: 4 September 2012
Venue - Dates:
9th European Conference on Silicon Carbide & Related Material (ECSCRM 2012), Saint Petersburg, Russian Federation, 2012-09-02 - 2012-09-06
Keywords:
carrier concentration, carrier mobility, electrical, resistivity, silicon carbide (SiC)
Organisations:
Engineering Science Unit
Identifiers
Local EPrints ID: 355286
URI: http://eprints.soton.ac.uk/id/eprint/355286
PURE UUID: fb32b4b0-492a-444b-931f-9c6da3619e65
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Date deposited: 21 Aug 2013 14:29
Last modified: 15 Mar 2024 03:24
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Contributors
Author:
Le Zhong
Author:
Fred Reed
Author:
Salim Taysir
Author:
Matteo Bosi
Author:
Giovanni Attolini
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