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Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates

Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates
To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the temperature ramps used for the carbonization. 3C-SiC layers were deposited on (001) and (111) Si substrates by VPE. The mechanical deformation of the wafer was measured by makyoh, obtaining 2D maps of the entire wafers. For the same pre-growth procedures, the substrate curvature depends strongly on the orientation of the substrate, (001) or (111), being generally lower for (111) substrates. The deformation results were compared with XRD and Raman spectroscopy. Plastic deformation of the substrate was evidenced by XRD, while the presence of tensile stress is suggested by Raman analysis.
carbonization, deformation, silicon carbide (SiC), stress
137-140
Watts, Bernard Enrico
c9f5cd73-4151-49af-ae24-91554f776e34
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
Besagni, Tullo
bfc3aac2-b16a-4441-818a-a3a7f076d144
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Ferrari, Claudio
26b226b8-e827-4fbd-ab0b-f5426ada2e46
Rossi, Francesca
e48a4ed7-785e-4844-adc1-036813b9313e
Riesz, Ferenc
3d5230e1-79b6-497f-8d76-71b803c6c30a
Jiang, Liu Di
374f2414-51f0-418f-a316-e7db0d6dc4d1
Watts, Bernard Enrico
c9f5cd73-4151-49af-ae24-91554f776e34
Attolini, Giovanni
410b131d-f500-471a-8f6c-2e35d8ebb547
Besagni, Tullo
bfc3aac2-b16a-4441-818a-a3a7f076d144
Bosi, Matteo
13854e98-1af2-4d93-9065-d9f87049a4a5
Ferrari, Claudio
26b226b8-e827-4fbd-ab0b-f5426ada2e46
Rossi, Francesca
e48a4ed7-785e-4844-adc1-036813b9313e
Riesz, Ferenc
3d5230e1-79b6-497f-8d76-71b803c6c30a
Jiang, Liu Di
374f2414-51f0-418f-a316-e7db0d6dc4d1

Watts, Bernard Enrico, Attolini, Giovanni, Besagni, Tullo, Bosi, Matteo, Ferrari, Claudio, Rossi, Francesca, Riesz, Ferenc and Jiang, Liu Di (2010) Evaluation of curvature and stress in 3C-SiC grown on differently oriented Si substrates. 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway. 29 Aug 2010 - 02 Sep 2011 . pp. 137-140 . (doi:10.4028/www.scientific.net/MSF.679-680.137).

Record type: Conference or Workshop Item (Paper)

Abstract

To assess deformation issues in SiC/Si, different pre-growth procedures were investigated, involving the addition of SiH4 to C3H8 during the temperature ramps used for the carbonization. 3C-SiC layers were deposited on (001) and (111) Si substrates by VPE. The mechanical deformation of the wafer was measured by makyoh, obtaining 2D maps of the entire wafers. For the same pre-growth procedures, the substrate curvature depends strongly on the orientation of the substrate, (001) or (111), being generally lower for (111) substrates. The deformation results were compared with XRD and Raman spectroscopy. Plastic deformation of the substrate was evidenced by XRD, while the presence of tensile stress is suggested by Raman analysis.

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More information

Published date: 29 August 2010
Additional Information: Conference proceedings published online at - Scientific.Net: Materials Science and Engineering, Silicon and Carbon Related Materials 2010, Volumes 679-680
Venue - Dates: 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), Oslo, Norway, 2010-08-29 - 2011-09-02
Keywords: carbonization, deformation, silicon carbide (SiC), stress
Organisations: Engineering Science Unit

Identifiers

Local EPrints ID: 355288
URI: http://eprints.soton.ac.uk/id/eprint/355288
PURE UUID: 7e94b1bc-96d1-41d0-8715-e16cb41e6971
ORCID for Liu Di Jiang: ORCID iD orcid.org/0000-0002-3400-825X

Catalogue record

Date deposited: 28 Aug 2013 08:46
Last modified: 15 Mar 2024 03:24

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Contributors

Author: Bernard Enrico Watts
Author: Giovanni Attolini
Author: Tullo Besagni
Author: Matteo Bosi
Author: Claudio Ferrari
Author: Francesca Rossi
Author: Ferenc Riesz
Author: Liu Di Jiang ORCID iD

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