Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexes
Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexes
Neutral telluro- and seleno-ether complexes of the form [GaCl3(nBu2E)] (E = Se, Te) and [(GaCl3)2{nBuE(CH2)nEnBu}] (E = Se, n = 2; E = Te, n = 3) have been synthesised via a facile, high yielding reaction. These complexes have been shown to be suitable precursors for the low pressure chemical vapour deposition of Ga2Te3 and Ga2Se3, the first reported example of a telluroether complex being used for the deposition of a metal telluride. The thin films have been characterised by X- ray diffraction, SEM, EDX, Raman and Hall measurements. The films are crystalline, have good, uniform coverage and Raman spectra match literature values. Hall measurements show that the thin films are p-type semiconductors. Competitive deposition of Ga2Te3 onto photolithographically patterned SiO2/TiN substrates shows a preference for deposition onto TiN.
142-148
George, Kathryn
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de Groot, C. H.
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Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
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Jura, M.
69852ebd-2a00-4a77-b1f9-4101a2ff908a
Levason, William
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
2013
George, Kathryn
1e9bf4f9-226e-446e-9ef3-dd61c7f7aa11
de Groot, C. H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Gurnani, Chitra
18063024-d052-4fe3-8a79-fdecd227bc2c
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Jura, M.
69852ebd-2a00-4a77-b1f9-4101a2ff908a
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
George, Kathryn, de Groot, C. H., Gurnani, Chitra, Hector, Andrew L., Huang, Ruomeng, Jura, M., Levason, William and Reid, Gillian
(2013)
Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexes.
Physics Procedia, 46, .
(doi:10.1016/j.phpro.2013.07.056).
Abstract
Neutral telluro- and seleno-ether complexes of the form [GaCl3(nBu2E)] (E = Se, Te) and [(GaCl3)2{nBuE(CH2)nEnBu}] (E = Se, n = 2; E = Te, n = 3) have been synthesised via a facile, high yielding reaction. These complexes have been shown to be suitable precursors for the low pressure chemical vapour deposition of Ga2Te3 and Ga2Se3, the first reported example of a telluroether complex being used for the deposition of a metal telluride. The thin films have been characterised by X- ray diffraction, SEM, EDX, Raman and Hall measurements. The films are crystalline, have good, uniform coverage and Raman spectra match literature values. Hall measurements show that the thin films are p-type semiconductors. Competitive deposition of Ga2Te3 onto photolithographically patterned SiO2/TiN substrates shows a preference for deposition onto TiN.
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Published date: 2013
Organisations:
Organic Chemistry: Synthesis, Catalysis and Flow, Nanoelectronics and Nanotechnology, Electrochemistry
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Local EPrints ID: 360946
URI: http://eprints.soton.ac.uk/id/eprint/360946
PURE UUID: 65fe6a90-a1d6-4d07-b0b1-1d768de3672d
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Date deposited: 09 Jan 2014 12:41
Last modified: 15 Mar 2024 03:42
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Author:
Kathryn George
Author:
Chitra Gurnani
Author:
Ruomeng Huang
Author:
M. Jura
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