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Plating uniformity of bottom-up copper pillars and patterns for IC substrates with additive-assisted electrodeposition

Plating uniformity of bottom-up copper pillars and patterns for IC substrates with additive-assisted electrodeposition
Plating uniformity of bottom-up copper pillars and patterns for IC substrates with additive-assisted electrodeposition
Electrochemical behaviors of the base electrolyte containing different additives were investigated by galvanostatic potential transient measurements (GM), cyclic voltammetry tests (CV) and potentiostatic measurements. Copper deposits on sputtering copper seed from physical vapor deposition (PVD) were examined by a scanning electron microscope and X-ray diffraction spectra. Cross sections of copper pillars and fine line patterns were observed by metallographic microscope. GM result revealed ethylene oxide-propylene oxide co-polymer (EO/PO) performed a further inhibition on copper deposition in the presence of 60 ppm chloride ions as the increment of EO/PO concentration. GM, CV and potentiostatic results indicated that copper deposition was accelerated by synergetic effects of additives in the base electrolyte containing 60 ppm chloride ions, 20 mg/L EO/PO and 0.7 mg/L bis-(sodium sulfopropyl)-disul?de. Sputtering PVD copper seed with even deposit surface was recommended to form the uniformity of copper deposition through increasing the growing density of copper particles. Oscillatory was employed to form uniform distribution of copper deposits in thickness. Copper grain growth was preferentially [111] textured. Bottom-up copper pillars and fine line patterns with plating uniformity were fabricated to meet the requirement of an accurate impedance and the high density interconnection for IC substrates.
plating uniformity, copper electrodeposition, bottom-up
0013-4686
293-301
Chen, Yuanming
566f1457-6510-4fd1-9c91-a75a2db79020
He, Wei
e9186123-193c-45fc-b536-48d4b8116403
Wang, Chong
349e9492-0926-40d3-941d-9aae7967aa56
Tao, Zhihua
d94bac3c-63a8-4b24-aa88-70435aa3b9d6
Wang, Shouxu
145c7702-6a36-4a4b-ab23-d1f3a7cadfa2
Zhou, Guoyun
758a412a-9b0f-4718-a26a-8d9a2b77c4cf
Moshrefi-Torbati, M.
65b351dc-7c2e-4a9a-83a4-df797973913b
Chen, Yuanming
566f1457-6510-4fd1-9c91-a75a2db79020
He, Wei
e9186123-193c-45fc-b536-48d4b8116403
Wang, Chong
349e9492-0926-40d3-941d-9aae7967aa56
Tao, Zhihua
d94bac3c-63a8-4b24-aa88-70435aa3b9d6
Wang, Shouxu
145c7702-6a36-4a4b-ab23-d1f3a7cadfa2
Zhou, Guoyun
758a412a-9b0f-4718-a26a-8d9a2b77c4cf
Moshrefi-Torbati, M.
65b351dc-7c2e-4a9a-83a4-df797973913b

Chen, Yuanming, He, Wei, Wang, Chong, Tao, Zhihua, Wang, Shouxu, Zhou, Guoyun and Moshrefi-Torbati, M. (2014) Plating uniformity of bottom-up copper pillars and patterns for IC substrates with additive-assisted electrodeposition. Electrochimica Acta, 120, 293-301. (doi:10.1016/j.electacta.2013.12.112).

Record type: Article

Abstract

Electrochemical behaviors of the base electrolyte containing different additives were investigated by galvanostatic potential transient measurements (GM), cyclic voltammetry tests (CV) and potentiostatic measurements. Copper deposits on sputtering copper seed from physical vapor deposition (PVD) were examined by a scanning electron microscope and X-ray diffraction spectra. Cross sections of copper pillars and fine line patterns were observed by metallographic microscope. GM result revealed ethylene oxide-propylene oxide co-polymer (EO/PO) performed a further inhibition on copper deposition in the presence of 60 ppm chloride ions as the increment of EO/PO concentration. GM, CV and potentiostatic results indicated that copper deposition was accelerated by synergetic effects of additives in the base electrolyte containing 60 ppm chloride ions, 20 mg/L EO/PO and 0.7 mg/L bis-(sodium sulfopropyl)-disul?de. Sputtering PVD copper seed with even deposit surface was recommended to form the uniformity of copper deposition through increasing the growing density of copper particles. Oscillatory was employed to form uniform distribution of copper deposits in thickness. Copper grain growth was preferentially [111] textured. Bottom-up copper pillars and fine line patterns with plating uniformity were fabricated to meet the requirement of an accurate impedance and the high density interconnection for IC substrates.

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More information

e-pub ahead of print date: 4 January 2014
Published date: 20 February 2014
Keywords: plating uniformity, copper electrodeposition, bottom-up
Organisations: Mechatronics

Identifiers

Local EPrints ID: 361123
URI: http://eprints.soton.ac.uk/id/eprint/361123
ISSN: 0013-4686
PURE UUID: 9b2f7202-c445-47fe-a9da-3847ee02f04a

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Date deposited: 15 Jan 2014 11:25
Last modified: 14 Mar 2024 15:46

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Contributors

Author: Yuanming Chen
Author: Wei He
Author: Chong Wang
Author: Zhihua Tao
Author: Shouxu Wang
Author: Guoyun Zhou

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