Er-doped planar waveguides for power amplifier applications
Er-doped planar waveguides for power amplifier applications
New devices are required to provide effective tools for DIAL or LIDAR measurements from space, which will enable improved mapping of the concentration and distribution of CO2 in our atmosphere. Here we present characteristics of Er-doped thin film waveguides, with an extended gain bandwidth, which are applicable to planar waveguide power amplifiers for wavelengths around the 1572 nm CO2 absorption peaks. Planar waveguide films have been fabricated by sputtering of fluorophosphate and tellurite based glasses onto oxidised silicon wafers, and their properties characterized. The deposition parameters for undoped and Er,Yb-doped films have been assessed and studied, achieving losses of <1.5 dB/cm at 633 nm for the as deposited waveguides. A comparison between the two host materials is made and the potential performance discussed.
859908
Mackenzie, J.I
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Murugan, G.S.
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Yu, A.W.
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Abshire, J.B.
6b2add7e-62ea-4820-99bb-3ba9a2409929
Mackenzie, J.I
1d82c826-fdbf-425b-ac04-be43ccf12008
Murugan, G.S.
a867686e-0535-46cc-ad85-c2342086b25b
Yu, A.W.
1bf32468-294f-45dd-84b5-21e3d5fe365a
Abshire, J.B.
6b2add7e-62ea-4820-99bb-3ba9a2409929
Mackenzie, J.I, Murugan, G.S., Yu, A.W. and Abshire, J.B.
(2013)
Er-doped planar waveguides for power amplifier applications.
SPIE Photonics West 2013, , San Francisco, United States.
02 - 07 Feb 2013.
.
(doi:10.1117/12.2004053).
Record type:
Conference or Workshop Item
(Paper)
Abstract
New devices are required to provide effective tools for DIAL or LIDAR measurements from space, which will enable improved mapping of the concentration and distribution of CO2 in our atmosphere. Here we present characteristics of Er-doped thin film waveguides, with an extended gain bandwidth, which are applicable to planar waveguide power amplifiers for wavelengths around the 1572 nm CO2 absorption peaks. Planar waveguide films have been fabricated by sputtering of fluorophosphate and tellurite based glasses onto oxidised silicon wafers, and their properties characterized. The deposition parameters for undoped and Er,Yb-doped films have been assessed and studied, achieving losses of <1.5 dB/cm at 633 nm for the as deposited waveguides. A comparison between the two host materials is made and the potential performance discussed.
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e-pub ahead of print date: 2013
Venue - Dates:
SPIE Photonics West 2013, , San Francisco, United States, 2013-02-02 - 2013-02-07
Organisations:
Optoelectronics Research Centre
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Local EPrints ID: 362834
URI: http://eprints.soton.ac.uk/id/eprint/362834
PURE UUID: ac2a2211-5121-411d-9cb2-659a20993c3f
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Date deposited: 12 Mar 2014 12:14
Last modified: 15 Mar 2024 03:23
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Contributors
Author:
A.W. Yu
Author:
J.B. Abshire
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