Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios
Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.
61-64
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
14 February 2014
Zhong, Le
d4fc47dd-402d-48db-8e7e-9337484155ef
Reed, P.A.S.
8b79d87f-3288-4167-bcfc-c1de4b93ce17
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Zhong, Le, Reed, P.A.S., Huang, Ruomeng, de Groot, C.H. and Jiang, Liudi
(2014)
Amorphous SiC based non-volatile resistive memories with ultrahigh ON/OFF ratios.
Microelectronic Engineering, 119, .
(doi:10.1016/j.mee.2014.02.004).
Abstract
Amorphous SiC based resistive memory Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. Co-existence of bipolar and unipolar behavior has been observed with ON/OFF current ratio in the range of 108–109. These high ratios are due to the conduction in the OFF state being dominated by the Schottky barrier between the Au and SiC. ON/OFF ratios exceeding 107 over 10 years were predicted from retention characterization. The unique performance combination of the extremely high ON/OFF ratio, coexistence of bipolar and unipolar switching modes as well as excellent stability and retention suggest significant application potentials of Cu/a-SiC/Au RM devices.
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Published date: 14 February 2014
Organisations:
Engineering Mats & Surface Engineerg Gp, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 363214
URI: http://eprints.soton.ac.uk/id/eprint/363214
ISSN: 0167-9317
PURE UUID: 431725c7-7380-4311-a772-e564b94b684c
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Date deposited: 21 Mar 2014 11:38
Last modified: 15 Mar 2024 03:42
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Author:
Le Zhong
Author:
Ruomeng Huang
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